FEATURES                                                                         BENEFITS

Especially suited for applications where multi-channel fast acquisition is a concern, i.e. feedback systems

This device performs current measurement from ±2.5 nA
(with a resolution of 298 aA) up to ±11 mA (resolution of 1.35 nA) with sampling frequencies of up to 26 kHz (for 1 channel and a 16-bit resolution) and 6.5 kHz (4 channels, 16 bit/sample)
Extremely low current measurements
Bipolar current measurements
Housed in a light and extremely compact box Can be placed close to the signal sources in order to reduce cable lengths and minimize possible noise pick-up
Low temperature drifts, good linearity and very low noise High-precision current measurements
Modular communication capability Allows the user to freely select the type of communication interface, allowing control of the instrument with different types of programming languages and/or operating systems
Buffered voltage monitors that are proportional
to the measured input current
Allows direct analogue monitoring on the oscilloscope
High voltage (30 V) output Detector biasing


  • Ultra-low current measurements                 
  • Si and Diamond detectors readout
  • Beam position monitoring
  • Ion chamber readout

 This product is sold under license of Elettra Sincrotrone Trieste (Italy)

AliVata System


AliVata System is a portable and compact readout system for silicon sensor characterization

ALIVATA is  based on the GPn and HDRn ASCIC families of IDEAS and enables the user to read out  or characterize each individual volume of silicon micro-dosimeters, silicon strip or pad sensors as well as SiPM based detector systems.


  • 1 keV energy resolution
  • Peaking time depends on the ASIC : 50 ns (fast) 500 ns (slow) for the GP7
  • Up to 4 data streams with a max. of 16 chips on each of the streams
  • Connectivity PC by UDP (Ethernet)
  • TDC resolution better than 100ps
  • Autotrigger
  • External trigger
  • Voltage supply: +5 V
  • Data Acquisition Software for Windows, Linux and Mac OSX

This product is sold under license of Spanish National Research Council (CSIC) and University of Valencia (Spain)


Scanning TCT System


Particulars Scanning TCT System is a complete setup for measurements of transient currents generated in semiconductor sensors with narrow laser beam. It can be used for standard and Edge-TCT measurements. Edge-TCT enables measurements of charge collection and carrier velocity profiles – crucial for understanding the performance of heavily irradiated detectors.



  • Wide band current amplifier
  • Bias-T
  • High voltage low pass filter
  • Laser diode (650 nm, 1064 nm)
  • Programmable laser driver for sub-nanosecond laser pulses
  • Laser beam optics, beam spot 8 μm FWHM
  • XYZ moving stages for precise DUT positioning in the beam and focus tuning
  • Water cooled Peltier mounting block for DUT temperature control 
  • Aluminium closure for light and RF shielding and atmosphere control 
  • Dimensions: 80x40x40 cm
  • Weight: 20 kg
  • Hardware control software (connection via USB)
  • Data acquisition software
  • ROOT based package for data analysis




• Bandwidth 0.01 - 2000 MHz
• Bias 6 - 15 V
• Amplification 35 dB or 53 dB
• Input, output impedance: 50 Ω
• Dimensions: 7x5x1.5 cm3



• Max voltage 1 kV
• Freq. range: 0.01 - 2000 MHz
• Input, output impedance: 50 Ω
• Dimensions: 7x5x1.5 cm3


HV Low-pass filter

• Filter high frequency
  interferences from HV power
• Max voltage 2 kV

Fibre coupled laser with optics on translation stage

• Laser diode 660 nm or 1064 nm 

Scanning-TCT-fiber• Tunable pulse width 0.4 ns - 4 ns

• Tunable pulse power equivalent to 10 MIP - 100 MIP in Si

• Single pulse mode 50 Hz to 1 MHz

• 1024 bits deep pulse sequence

• NIM logic trigger output

• NIM external trigger

• USB control


Sample mounting

• Aluminium support block on XY translation stage:
< 1 μm precision, 2 kg load, 5 cm range
• Block fixed to water cooled Peltier element
(40 W, ΔT ~ 40 °C)
• PT100 for temperature measurement




Executables with GUI for complete measurement

control: Laser control, stage movement, data
ROOT based package for analysis of TCT signals



Beam Intensity Monitor



Transmissive photodiode: DDS1- XXX/X

The DDS1 photodiode is used for diagnostic X-ray applications

  • P-on-N silicon detector
  • Two available square active area: 5x5 mm2 or 10x10 mm2
  • Thickness: 10 μm
  • Very high transmission in a wide range of energies
  • No external voltage is needed for operation
  • Dimensions: 41x68x12 mm3

  • Easily mounted in experiment

  • The beam intensity is measured by output current

  • Depletion layer thickness (bias = 0): 7 µm


General Features

DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.


Specifications (electro-optical characteristics at 25ºC)

Model No.

Active area



DarkCurrent(2) (pA)







Max storage Te(oC)

















 (1): 1 µAReverse current, (2): measured at 0V, (3): measured at 8 keV


Experimental results

Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.


Bean10Imagen2 beam


Drawing - packaging

Bean4 2

printed circuit board
A-anode, C-cathode

bean7 2bean8 2

5x5 mm2 and 10x10 mm2 Si photodiode

Accessory P1 (optional)



Optional packaging
Two Lemo connected(ERN.00.250.GTL)
Actived area limited to 50.25 mm2
Two interchangeable kapton windows



The photodiodes follow the below nomenclature.

All part numbers start with:

[chip area]mm2

[optional packaging]













Typical applications

Diagnostic X-ray applications and real-time X-ray beam position monitor for synchroton beamlines

Application circuit:




































Further information

Contact us: This email address is being protected from spambots. You need JavaScript enabled to view it. or This email address is being protected from spambots. You need JavaScript enabled to view it. 
Other specifications are available on request
This product is sold under license of Spanish National Research Council (CSIC) And Alba Cells Synchroton (Spain)
Rev. 2.1 specifications subject to change without notice


Laser System



The Alibava Laser System is a low power class 1 laser source ideal to work with silicon detectors. The detector characterization, the detector's strip structure, the strips charge sharing or the spatial resolution are some examples of the measurements possible with this equipment.
The Laser System includes a driver to use the laser diode in pulse mode with an external trigger signal. For each trigger pulse, the laser generates a 5 ns width pulse with a rise time of 1 ns. An optical focuser is included as well to help the user to direct the optical signal to a micrometric spot on the target detector. This equipment is compatible with the Alibava System Classic ASC.


General features

  • Class 1 laser diode
  • Diode Peak power: 0.5 mW
  • Wavelength: 980 nm or 1064 nm
  • FC/APC Optical connector output
  • Input trigger Lemo connector
  • Power supply 5V DC
  • Plug and play
  • Laser driver:
    • 5 ns Pulses width
    • 1 ns rise time

System contents

  • 1 Optical focuser:
    • 12 mm Focal distance
    • 20 μm laser spot
  • 1 Fiber optic cable:
    • To connect the laser output with the focuser
  • 1 Lemo cable 1 power supply (+5 V AC/DC adaptor)
    • To connect the input trigger with your trigger source
  • 1 FC/APC to FC/APC connector

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