INSTRUMENTS FOR DETECTION

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ADVANCED PARTICLE PHYSICS INSTRUMENTS

RESEARCH INSTRUMENTS

Systems for the characterization of microstrip semiconductor radiation detectors

Beam Intensity and Position Monitors

Silicon Transmission Photodiodes with very low absorption < 15% (8 keV) and very high efficiency.

EDUCATIONAL SYSTEMS

Complete Educational systems dedicated to Silicon Microstrip Radiation Detectors

CUSTOM SERVICES

Custom systems of all our equipment and new custom engineering projects

PUBLICATIONS

Quality Assurance methodology for the ATLAS Inner Tracker strip sensor production

21 /11/ 2020

M.Ullán, P. Allport, K. Dette, V. Fadeyev, J. Fernández-Tejero, C. Fleta, L. Gonella, I. Kopsalis, R.S. Orr, Y. Unno.Nuclear Instruments and Methods in Physics Research Section A. Volume 981, 21 November 2020, 164521.

The production of the strip sensors for the ATLAS Inner Tracker (ITk) will start in 2020. Nearly 22,000 large area sensors will be produced over a period of about five years by Hamamatsu Photonics K.K. (HPK). The institutes involved in the sensor development and production are committed to deliver and maintain the highest quality sensors for the experiment. A Quality Assurance (QA) strategy has been prepared to be carried out during the whole production period. Once the process has been characterized as providing the required pre-irradiation specifications and the proper radiation hardness…

Evaluation of characteristics of Hamamatsu low-gain avalanche detectors

21/04/2019

Sayaka Wadaa, Kyoji Ohnarua, Kazuhiko Haraa, Junki Suzukia, Yoshinobu Unnob, Koji Nakamurab, Kazunori Hanagakib, Yoichi Ikegamib, Kazuhisa Yamamurac, Shintaro Kamadac, Yuhei Aboc, Hitomi Tokutaked, Daiki Yamamotoe
Nuc. Instr. Meth. A , Volume 924, 21 April 2019, Pages 380-386

Low-gain avalanche detectors (LGADs) are attractive because of their fast response to realize a 4-dimensional (4D) tracker in future experiments in high energy physics and other applications. We fabricated LGAD diodes and strip sensors. Their responses before and after irradiation to gamma rays or neutrons were evaluated with light-emitting diodes (LEDs) of various wave lengths and with an infrared laser. The sensors showed a gain of more than 10 before irradiation. Little reduction of gain was observed with gamma irradiation. A substantial reduction of gain was observed after neutron irradiation. A gain increase observed in the interstrip region after neutron irradiation, whereas the gain was equal to one before irradiation.