Beam Intensity Monitor

 

BEAM-INSTENSITY-MONITOR

Transmissive photodiode: DDS1- XXX/X

The DDS1 photodiode is used for diagnostic X-ray applications

  • P-on-N silicon detector
  • Two available square active area: 5x5 mm2 or 10x10 mm2
  • Thickness: 10 μm
  • Very high transmission in a wide range of energies
  • No external voltage is needed for operation
  • Dimensions: 41x68x12 mm3

  • Easily mounted in experiment

  • The beam intensity is measured by output current

  • Depletion layer thickness (bias = 0): 7 µm

 

General Features

DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.

 

Specifications (electro-optical characteristics at 25ºC)

Model No.

Active area

(mm2)

BreakdownVoltage(1)(V)

DarkCurrent(2) (pA)

CapacitanceC(2)

(nF)

ShuntResistance

(MΩ)

SensitivityS(3)

(A/W)

Max storage Te(oC)

AS04-110A

10x10mm2

68.9

16.7

1.20

0.275

230

0.035

80

AS04-105A

5x5mm2

28.1

14.6

0.13

0.123

420

 (1): 1 µAReverse current, (2): measured at 0V, (3): measured at 8 keV

 

Experimental results

Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.

 

Bean10Imagen2 beam

 

Drawing - packaging

Bean4 2

printed circuit board
A-anode, C-cathode

bean7 2bean8 2

5x5 mm2 and 10x10 mm2 Si photodiode

Accessory P1 (optional)

 

Bean5Bean6beam11 

Optional packaging
Two Lemo connected(ERN.00.250.GTL)
Actived area limited to 50.25 mm2
Two interchangeable kapton windows

 

Nomenclature

The photodiodes follow the below nomenclature.

All part numbers start with:

[chip area]mm2

[optional packaging]

[]

Value

[]

Value

1010

100

P1

 

1005

25

   

 

Typical applications

Diagnostic X-ray applications and real-time X-ray beam position monitor for synchroton beamlines

Application circuit:


beanapps

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Further information

Contact us: This email address is being protected from spambots. You need JavaScript enabled to view it. or This email address is being protected from spambots. You need JavaScript enabled to view it. 
Other specifications are available on request
This product is sold under license of Spanish National Research Council (CSIC) And Alba Cells Synchroton (Spain)
Rev. 2.1 specifications subject to change without notice
information

 

    • LOCATION

      Edifici Eureka 
      Av. Can Domènech s/n
      Campus UAB
      08193 Bellaterra (Barcelona)
      Spain

      +34 935 868 832

       

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